Flexible self-powered DUV photodetectors with high responsivity utilizing Ga₂O₃/NiO heterostructure on buffered Hastelloy substrates

In this research, β-Ga 2 O 3 /NiO heterostructures were grown directly on CeO buffered Hastelloy flexible substrates. With pulsed laser deposition under high temperatures, as-grown and NiO thin films have a preferred out-of-plane orientation along the ⟨−201⟩ ➎111➉ directions. This is due to ideal epitaxial ability of buffer layer, which serves as perfect template for growth single-oriented by creating constant gradient from (2.7 Å ➎001➉) (2.9 ➎110➉), eventually (3.04 ➎010➉). The substrates endow photodetectors with good deformability mechanical robustness. Moreover, owing type-II band alignment heterostructures, photocurrent at zero bias 284 nm light illumination. addition, significantly higher than when using an analogous heterostructure (as described in some previous reports), because are crystalized single fewer defects.